(GaNrich Launches GaN Devices Using Sapphire Substrate Technology.)
GaNrich officially begins mass production of GaN on sapphire power devices in 2024, and through the Pin-to-Pin replacement packaging, can directly replace traditional Si and SiC devices. This breakthrough R&D not only disrupts the traditional Silicon device technology landscape, but also addresses the current pain points of GaN devices, bringing New solutions to diverse market applications.
GaNrich Semiconductor Corp. was founded in 2020, rooted in the LED industry—the pioneer of GaN technology. The company specializes in designing high-quality GaN power devices while optimizing the existing optoelectronic industry ecosystem. As the only company in Taiwan offering comprehensive services, including mask design, packaging, system module applications, and validation, GaNrich stands out in the market.
With a strong portfolio of patents in mask design and packaging, GaNrich ensures robust technological protection for its products. Additionally, it has established a complete reliability and failure analysis platform to guarantee product stability and durability, meeting customer needs at every stage of product development. Thanks to its exceptional R&D capabilities and one-stop service model, GaNrich is steadily securing its position in the market.
GaNrich is the first in Taiwan to introduce GaN devices manufactured on sapphire substrates. It offers diverse range of products, including GaN on Sapphire D-mode, GaN on Si E-mode GaN FETs, and GaN ICs, making it the only company in Taiwan capable of fully supplying such a comprehensive product lineup.
Through years of experience in III-V semiconductor development, GaNrich provides highly competitive cost and production capacity advantages. Its products have already attracted interest from multiple global industry leaders and are currently undergoing validation.
(GaNrich Designs and Developes 8 inch GaN Wafers)